Publications of YB IPT RAS members for 2012 year

  1. Rudakov V.I., Denisenko Yu.I., NaumovV.V., Simakin S.G. Formation and investigation of cobalt silicide ultrathin layers in Ti/Co/Ti-, TiN/Ti/Co-, and TiN/Co-on-silicon structures. Technical Physics, 2012, Volume 57, Issue 2, pp 279-285.
  2. Zimin S.P., Gorlachev E.S., Naumov V.V., Skok F.O. Investigations of the pore formation in the lead selenide films using glacial acetic acid-and nitric acid-based electrolyte. Nanoscale Research Letters, 2012, 7:338.
  3. Rudakov V.I., Ovcharov V.V., Prigara V.P. Influence of optical properties of the SOI structure on the wafer temperature during rapid thermal annealing. Russian Microelectronics, 2012, Volume 41, Issue 1, pp 15-24.
  4. Kostyuchenko V.V. Properties of Single Molecule Magnet Ni4Mo12. Solid State Phenomena, 2012, Volume 190, pp 490-493.
  5. Amirov I.I., Zimin S.P., Gorlachev E.S., Naumov V.V., Abramof E., Rappl P.H.O. Investigations of the inductively coupled argon plasma sputtering of Pb1?xSnxTe ternary solid solution. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2012, Volume 6, Issue 4, pp 643-646.
  6. Rudakov V.I., Bogoyavlenskaya E.A., Denisenko Yu.I. Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system. Technical Physics Letters, 2012, Volume 38, Issue 11, pp 982-984.
  7. Rudakov V., Ovcharov V., Kurenya A., Prigara V. Bistable behavior of silicon wafer in rapid thermal processing setup. Microelectronic Engineering, 2012, Volume 93, pp 67-73.
  8. Amirov I.I., Kaljnov V.A., Morozov O.V., Postnikov A.V. The technology of MEMS devices fabrication with isolated areas in silicon wafer. Nano and Microsystem Technique, 2012, № 7, pp 15-19. (annotation)
  9. Zorina D.D., Pron N.P., Krivelevich S.A., Bachurin V.I., Churilov A.B. Influence of oxygen dose and heat treatment conditions on the formation of ion synthesized borosilicate layers. Bulletin of the Russian Academy of Sciences: Physics, 2012, Volume 76, Issue 5, pp 588-591.
  10. Vasilev S.V., Churilov A.B., Prikhodko O.Y., Rudy A.S., Shekhovtsova N.V., Yagushkina A.Y. A Study of Calcifying Nanoparticles Extracted from the Vorotilovskaya Well. Journal of Materials Science and Engineering B, 2012, № 2(8),pp 464-470. (PDF)
  11. Pliss E.M., Tikhonov I.V., Rusakov A.I. The kinetics and mechanism of reactions of aliphatic stable nitroxyl radicals with alkyl and peroxide radicals during styrene oxidation. Russian Journal of Physical Chemistry B, 2012, Volume 6, Issue 3, pp 376-383.
  12. Pliss E.M., Tichonov I.V., Rusakov A.I. Kinetics and mechanism of reactions of aliphatic stable nitroxides in chemical and biological chain processes. In book «Nitroxides - Theory, Experiment and Applications». InTech, 2012, Chapter 9, pp 263-284. ISBN 978-953-51-0722-4.
  13. Volodin V.A., Popov A.A., Misiuk A., Rinnert H., Vergnat M. Evolution of silicon and hydrogen bonding in silicon-rich nitride films prepared by plasma-enhanced chemical vapor deposition and annealedunder high pressure. Nanoscience and Nanotechnology Letters, 2012, Volume 4, pp 364-368.
  14. Zimin S.P., Gorlachev E.S., Skok F.O. Abnormal conductivity behavior in porous lead telluride films. Nanoscale Research Letters, 2012, 7:442.
  15. Orlikovskij A.A., Berdnikov A.E., Mironenko A.A., Popov A.A., Chernomordik V.D., Perminov A.V. Method for formation of dielectric layer with conductivity switching effect. Patent RU 2449416 C1. Date of publication: 27.04.2012. (PDF)
  16. Rudyj A.S., Berdnikov A.E., Mironenko A.A., Gusev V.N., Gerashchenko V.N., Metlitskaja A.V., Skundin A.M., Kulova T.L. Method to manufacture thin-film anode of lithium-ion accumulators based on films of nanostructured silicon coated with silicon dioxide. Patent RU 2474011 C1. Date of publication: 27.01.2013. (PDF)
  17. Prigara F.V. Effect of magnetic ordering on the electronic structure of metals. arXiv:1204.5013 (2012)


Контактная информация
Корпус А
150067, г. Ярославль, ул. Университетская, д. 21
+7 (4852) 24-65-52 (приемная)
+7 (4852) 24-09-55 (бухгалтерия)
Корпус Б
150055, г. Ярославль, ул. Красноборская, д. 3
+7 (4852) 24-53-53