Publications of YB IPT RAS members for 2011 year

  1. Rudyi A.S., Kulikov A.N., Metlitskaya A.V. Simulation of formation of nanostructures during sputtering of the surface by ion bombardment. Russian Microelectronics, 2011, Volume 40, Issue 2, pp 98-107.
  2. Vaganova E.I., Mironenko A.A., Paporkov V.A., Rud N.A., Rudyi A.S., Prokaznikov A.V. Increasing the efficiency of photoelectric cells by nanostructuring their surface. Russian Microelectronics, 2011, Volume 40, Issue 1, pp 31-39.
  3. Rudakov V.I., Denisenko Yu.I., Naumov V.V., Simakin S.G. Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures. Technical Physics Letters, 2011, Volume 37, Issue 2, pp 112-115.
  4. Rudakov V.I., Bogoyavlenskaya E.A., Denisenko Yu.I., Naumov V.V. Formation of thin-film HfO2/Si(100) structures by high-frequency magnetron sputtering. Russian Microelectronics, 2011, Volume 40, Issue 6, pp 383-388.
  5. Rudakov V.I., Denisenko Yu.I., Naumov V.V., Simakin S.G. Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures. Russian Microelectronics, 2011, Volume 40, Issue 6, pp 389-394.
  6. Korchagina T.T., Volodin V.A., Popov A.A., Khor’kov K.S., Gerke M.N. Formation of silicon nanocrystals in SiNx film on PET substrates using femtosecond laser pulses. Technical Physics Letters, July 2011, Volume 37, Issue 7, pp 622-625.
  7. Uvarov I.V., Naumov V.V., Aminov M.K., Kupriyanov A.N., Amirov I.I. Analysis of cesonance characteristics of metal micro- and nanobeams. Nano and Microsystem Technique, 2011, № 12, pp 45-48. (abstract, PDF)
  8. Uvarov I.V., Morozov O.V., Kozin I.A., Postnikov A.V., Amirov I.I., Kaljnov V.A. Dynamic characteristics of the sensing element of microaccelerometer with increased damping factor. Nano and Microsystem Technique, 2011, № 12, pp 38-40. (abstract, PDF)
  9. Kozin I.A., Postnikov A.V., Morozov O.V. Dynamics study of micromechanical devices with surface metallization. Nano and Microsystem Technique, 2011, № 12, pp 43-45. (abstract, PDF)
  10. Mordvintsev V.M., Sogoyan A.V., Kudryavtsev S.E., Levin V.L. The investigation of the radiation behavior of cells of energy-independent electrically reprogrammable memory based on self-formed conducting nanostructures. I. Mode of information storage. Russian Microelectronics, 2011, Volume 40, Issue 2, pp 87-97.
  11. Aminpour M., Trushin O., Rahman T.S. Effect of misfit dislocation on surface diffusion. Physical Review B, 2011, Volume 84, Issue 3, 035455.
  12. Karim A., Kara A., Trushin O., Rahman T.S. The crossover from collective motion to periphery diffusion for two-dimensional adatom-islands on Cu(111). Journal of Physics: Condensed Matter, 2011, Vol. 23, № 46, 462201.
  13. Zimin S.P., Gorlachev E.S., Amirov I.I., Naumov V.V. Lead selenide nanowire growth by vapor-liquid-solid mechanism under mask during plasma processing. Technical Physics Letters, 2011, Volume 37, Issue 10, pp 929-931.
  14. Zimin S.P., Gorlachev E.S., Naumov V.V., Buchin E.Yu., Zogg H. Fabrication of porous nanostructured lead chalcogenide semiconductors for modern thermoelectric and optoelectronic applications. Journal of Physics: Conference Series, 2011, Volume 291, № 1, 012023-1-6.
  15. Zimin S.P., Vasin V.M., Gorlachev E.S., Naumov V.V., Petrakov A.P., Shilov S.V. Fabrication and study of porous PbTe layers on silicon substrates. Physica Status Solidi C, 2011, Volume 8, Issue 6, pp 1801-1804.
  16. Zimin S.P., Vasin V.M., Gorlachev E.S., Buchin E.Yu., Naumov V.V. Investigations of PbSe layers after anodic electrochemical etching by scanning electron microscopy. Physica Status Solidi C, 2011, Volume 8, Issue 6, pp 1918-1922.
  17. Zimin S.P., Gorlachev E.S., Amirov I.I. RF sputtering of epitaxial lead chalcogenide films in argon and krypton plasma. Semiconductor Science and Technology, 2011, Volume 26, № 5, 055018-1-6.
  18. Zimin S.P., Gorlachev E.S., Amirov I.I, Zogg H., Abramof E., Rappl P.H.O. Sputtering rates of lead chalcogenide-based ternary solid solutions during inductively coupled argon plasma treatment. Semiconductor Science and Technology, 2011, Volume 26, № 10, 105003-1-5.
  19. Sobolev N.A., Kalyadin A.E., Shek E.I., Sakharov V.I., Serenkov I.T., Vdovin V.I., Parshin E.O., Makoviichuk M.I. Photoluminescence in silicon implanted with erbium ions at an elevated temperature. Semiconductors, 2011, Volume 45, Issue 8, pp 1006-1008.
  20. Rudyj A.S., Mironenko A.A., Arzumanjan A.M., Beglojan E.A., Gevorkjan V.A., Grigorjan S.G. Method of producing polyaniline composite [PANI(NX)-TiO2]. Patent RU 2429259 C2. Date of publication: 20.09.2011. (PDF)
  21. Mordvintsev V.M., Kudrjavtsev S.E. Cell of nonvolatile electrically programmable memory. Patent RU 2436190 C1. Date of publication: 10.12.2011. (PDF)
  22. Prigara F.V. Energy pseudogaps and structural transitions in metals. arXiv:1106.5859 (2011) (PDF)

Laboratories

Контактная информация
Корпус А
150007, г. Ярославль, ул. Университетская, д. 21
+7 (4852) 24-65-52 (приемная)
+7 (4852) 24-09-55 (бухгалтерия)
Корпус Б
150055, г. Ярославль, ул. Красноборская, д. 3
+7 (4852) 24-53-53