Publications of YB IPT RAS members for 2009 year

  1. Mozhaev A.V., Buchin E.Yu., Prokaznikov A.V. Three-dimensional simulation of dynamic processes of formation of microclusters in a crystalline matrix. Technical Physics, 2009, Volume 54, Issue 3, pp 327-332.
  2. Mozhaev A.V., Prokaznikov A.V. Potential computation in cluster growth models. Numerical methods and programming. Advanced Computing, 2009, Volume 10, pp 24-27.
  3. Buchin E.Yu., Vaganova E.I., Naumov V.V., Paporkov V.A., Prokaznikov A.V. Enhancement of the transversal magnetooptical Kerr effect in nanoperforated cobalt films. Technical Physics Letters, 2009, Volume 35, Issue 7, pp 589-593.
  4. Mozhaev A.V., Prokaznikov A.V. Computer simulation of the processes of formation of microclusters on the basis of scaling invariance of random walk. Russian Microelectronics, 2009, Volume 38, Issue 5, pp 291-298.
  5. Zvezdin A.K., Kostyuchenko V.V., Popov A.I., Popkov A.F., Ceulemans A. Toroidal moment in the molecular magnet V15. Physical Review B, 2009, Volume 80, 172404.
  6. Kostyuchenko V.V. Finite Size Effects in Field-Induced Transitions in Magnetic Multilayers. Solid State Phenomena, 2009, Volume 152-153, pp 245-248.
  7. Kostyuchenko V.V. Magnetic-field-induced transitions in anisotropic magnets with two compensation points. Physics of the Solid State, 2009, Volume 51, Issue 2, pp 334-337.
  8. Trushin O.S., Kokanov D.A., Bochkarev V.F., Naumov V.V., Buchin E.Yu. An automated stand for express-diagnostics of magnetoresistive structures. Russian Microelectronics, 2009, Volume 38, Issue 4, pp 257-259.
  9. Naumov V.V., Buchin E.Yu. Magnetoresistance of multilayered structures obtained by the magnetron method. Russian Microelectronics, 2009, Volume 38, Issue 5, pp 334-338.
  10. Ovcharov V.V., Rudakov V.I. Phenomenological model of the diffusion of impurity atoms in ultrathin silicon layers with a nonuniform distribution of temperatures. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2009, Volume 3, Issue 4, pp 639-643.
  11. Rudakov V.I., Gusev V.N. Calculation of the concentration profile of copper in the TiN/CoSi2/Si system during thermal heating. Russian Microelectronics, 2009, Volume 38, Issue 4, pp 279-284.
  12. Rudakov V.I., Kurenya A.L., Shornikov A.A., Gitlin M.L. Deposition of the IV–VI films by the hot-wall method on silicon substrates 100 mm in diameter. Russian Microelectronics, 2009, Volume 38, Issue 5, pp 339-344.
  13. Rabbering F., Kara A., Wormeester H., Warnaar T., Trushin O., Rahman T.S., Poelsema B. Dispersed Forces from Measured Shape Anisotropy of Adatom Islands: Revelations from an Accelerated Simulation Scheme. Physical Review Letters, 2009, Volume 103, Issue 9, 096105.
  14. Trushin O., Jalkanen J., Granato E., Ying S.C., Ala-Nissila T. Atomistic studies of strain relaxation in heteroepitaxial systems. Journal of Physics: Condensed Matter, 2009, Volume 21, № 8, 084211.
  15. Kara A., Trushin O., Yildirim H., Rahman T.S. Off-lattice self-learning kinetic Monte Carlo: application to 2D cluster diffusion on the fcc(111) surface. Journal of Physics: Condensed Matter, 2009, Volume 21, № 8, 084213.
  16. Nandipati G., Shim Y., Amar J.G., Karim A., Kara A., Rahman T.S., Trushin O. Parallel kinetic Monte Carlo simulations of Ag(111) island coarsening using a large database. Journal of Physics: Condensed Matter, 2009, Volume 21, № 8, 084214.
  17. Bachurin V.I., Krivelevich S.A. Influence of argon ion bombardment on the formation of intermetallic compounds in the nickel-aluminum system. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2009, Volume 3, Issue 2, pp 313-316.
  18. Shumilov A.S., Amirov I.I., Lukichev V.F. Simulation of the effects of deep grooving in silicon in the plasmochemical cyclic process. Russian Microelectronics, 2009, Volume 38, Issue 6, pp 385-392.
  19. Zimin S.P., Gorlachev E.S., Amirov I.I., Zong H. Micromasking effect and nanostuctures self-formation on the surface of lead chalcoenide epitaxial films on Si substrates during argon plasma treatment. Journal of Physics D: Applied Physics, 2009, Volume 42, № 16, 165205.
  20. Izyumov M.O. An electrostatic clamp with temperature stabilization of semiconductor wafers under plasma treatment. Instruments and Experimental Techniques, 2009, Volume 52, Issue 6, pp 886-887.
  21. Naumov V.V., Paporkov V.A., Lokhanin M.V. Dependence of the transversal magneto-optic Kerr effect on the incidence angle of light for ultrathin films of cobalt and Co/Cu/Co multilayers. Russian Microelectronics, 2009, Volume 38, Issue 4, pp 251-256.
  22. Naumov V.V., Bochkarev V.F., Buchin E.Yu. Increasing adhesion of metallic films to silicon by ion bombardment during growth. Technical Physics, 2009, Volume 54, Issue 7, pp 1072-1075.
  23. Makoviychuk M.I., Chapkevich A.L., Chapkevich A.A., Vinokurov V.A. Flicker-Noise Gas Sensor. Biomedical Engineering, 2009, Volume 43, Issue 3, pp 109-113.
  24. Mordvintsev V.M., Kudryavtsev S.E., Levin V.L. Electroforming as a process in the self-formation of conducting nanostructures for the nonvolatile electrically reprogrammable memory elements. Nanotechnologies in Russia, 2009, Volume 4, Issue 1-2, pp 121-128.
  25. Mordvintsev V.M., Kudryavtsev S.E., Levin V.L. High-stable nonvolatile electrically reprogrammable memory on self-formed conducting nanostructures. Nanotechnologies in Russia, 2009, Volume 4, Issue 1-2, pp 129-136.
  26. Bazylev B.A., Kononkova N.N., Popević A., Karamata S., Simakin S.G., Olujić J., Vujnović L., Memović E. Mantle Peridotites from the Dinaridic Ophiolite Belt and the Vardar Zone Western Belt, Central Balkan: A Petrological Comparison. Lithos, 2009, Volume 108, Issues 1–4, pp 37–71.
  27. Prigara F.V. Ferroelastic fluctuations in high-temperature superconductors. 2009, arXiv:0909.5569.
  28. Prigara F.V. The metal-insulator transition in semiconductors. 2009, arXiv:0902.4350.

Laboratories

Контактная информация
Корпус А
150007, г. Ярославль, ул. Университетская, д. 21
+7 (4852) 24-65-52 (приемная)
+7 (4852) 24-09-55 (бухгалтерия)
Корпус Б
150055, г. Ярославль, ул. Красноборская, д. 3
+7 (4852) 24-53-53